PART |
Description |
Maker |
2SC5606-A 2SC5606-T1-A 2SC56061 2SC5606 2SC5606-T1 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN NPN SILICON RF TRANSISTOR FOR LOW NOISE ・ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) NPN SILICON RF TRANSISTOR FOR LOW NOISE 路 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) NPN SILICON RF TRANSISTOR FOR LOW NOISE 隆陇 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
ST Microelectronics NEC
|
UPC2792TB-E3-A UPC2791TB UPC2791TB-E3 UPC2791TB-E3 |
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
|
CEL[California Eastern Labs]
|
UPC2746TB-E3 UPC2745TB UPC2745TB_97 UPC2745TB-E3 U |
3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
|
NEC[NEC]
|
UPC2748TB-E3 |
3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS
|
California Eastern Labs
|
UPC2708TB1 |
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
NEC
|
UPC2709TB1 |
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
NEC
|
UPC2771TB UPC2771TB-E3 UPC2762TB UPC2762TB-E3 UPC2 |
3 V SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS 3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
|
NEC[NEC]
|
2SC5012-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
|
Renesas Electronics Corporation
|
UPA835 UPA835TC UPA835TC-T1 |
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
|
NEC Corp. NEC[NEC]
|
2SC5011 2SC5011-T1 2SC5011-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
|
Renesas Electronics Corporation
|
UPC2708TB-E3-A UPC2708TB |
5 V, SUPER MINIMOLD WIDEBAND SI RFIC AMPLIFIER
|
CEL[California Eastern Labs]
|